The structural, morphological, optical and electrical properties of CeO₂ thin films deposited on glass substrate using spin coating technique are studied with and without gamma irradiation. The prepared samples were gamma irradiated with ⁶⁰Co at room temperature with dose range from 0 to 100 kGy. The pristine and gamma exposed samples were analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy dispersive X-rays (EDX), UV–Vis Spectroscopy, photoluminescence (PL) and Hall measurements. XRD results confirmed the face-centered cubic phase of CeO₂ for all samples and showing the decreased in the crystallinity with gamma irradiation dose values. The FESEM images shows that after gamma exposure, the CeO₂ thin films surface became compressed, smooth and uniform. UV–Vis Spectroscopy determined that the shifting of energy band gap values accredited by creating or eradication of induced defects inside the energy band gap. PL peaks appeared in pristine and irradiated thin films can be allocated to the oxygen related defects. The mobility, electrical resistivity and carrier concentration were estimated for all sample by Hall measurements. It was found that the electrical properties, such as an increase in the number of carrier concentration and the decrease in the resistivity, of the CeO₂ thin films were improved with gamma rays irradiation. The study successfully demonstrates that CeO₂ thin films is a potential candidate to detect gamma radiation for dosemetric application.

研究了在有和没有γ辐照下，使用旋涂技术沉积在玻璃基板上的CeO ₂薄膜的结构，形态，光学和电学性质。制备的样品在室温下用⁶⁰ Coγ辐照，剂量范围为0至100 kGy。通过X射线衍射（XRD），场发射扫描电子显微镜（FESEM），能量色散X射线（EDX），UV-Vis光谱，光致发光（PL）和霍尔测量分析了原始和伽玛暴露的样品。XRD结果证实了所有样品的CeO ₂的面心立方相，并显示出随着γ辐照剂量值结晶度降低。FESEM图像显示，在伽玛射线照射后，CeO ₂薄膜表面变得压缩，光滑且均匀。紫外可见光谱法确定，通过在能带隙内产生或消除诱发缺陷，能带隙值的移动得到认可。在原始和辐照的薄膜中出现的PL峰可归因于与氧有关的缺陷。通过霍尔测量来估计所有样品的迁移率，电阻率和载流子浓度。发现通过伽马射线辐照改善了CeO ₂薄膜的电性能，例如载流子浓度数的增加和电阻率的降低。这项研究成功地证明，CeO ₂薄膜是检测剂量测量应用中的伽马射线的潜在候选者。