We present the results of experimental investigations of the temperature behaviors of the volt-ampere characteristics of Tl 4 HgI 6 and Tl 4 CdI 6 crystals. The temperature dependence of resistance is analyzed and the resistivities of the samples at room temperature are determined. The activation energy is computed and the dynamics of changes in the temperature coefficient of resistance is determined for these crystals. The presence of structural transformation in the Tl 4 HgI 6 crystal and its absence in the Tl 4 CdI 6 crystal (within the temperature range 293–490°K) are established. The possibility of practical application of the investigated samples is analyzed.

中文翻译：

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A4BX6 族晶体的电物理特性的温度依赖性

我们展示了 Tl 4 HgI 6 和 Tl 4 CdI 6 晶体的伏安特性的温度特性的实验研究结果。分析电阻的温度依赖性并确定样品在室温下的电阻率。计算活化能并确定这些晶体的电阻温度系数变化的动力学。确定了在 Tl 4 HgI 6 晶体中存在结构转变，而在 Tl 4 CdI 6 晶体中不存在结构转变（在 293-490°K 的温度范围内）。分析了所研究样品实际应用的可能性。