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An Origin of Dzyaloshinskii–Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-07-01 , DOI: 10.1088/0256-307x/37/8/087501
Jin Yang 1 , Jian Li 1 , Liangzhong Lin 2 , Jia-Ji Zhu 1
Affiliation  

We present a theory of both the itinerant carrier-mediated RKKY interaction and the virtual excitations-mediated Bloembergen-Rowland (BR) interaction between magnetic moments in graphene induced by proximity effect with a ferromagnetic film. We show that the RKKY/BR interaction consists of the Heisenberg, Ising, and Dzyaloshinskii-Moriya (DM) terms. In the case of the nearest distance, we estimate the DM term from the RKKY/BR interaction is about 0.13 meV for the graphene/Co interface, which is consistent with the experimental result of DM interaction $0.16 \pm 0.05$ meV. Our calculations indicate that the intralayer RKKY/BR interaction may be a possible physical origin of the DM interaction in the graphene-ferromagnet interface. This work provides a new perspective to comprehend the DM interaction in graphene/ferromagnet systems.

中文翻译:

由于层内 RKKY/BR 相互作用,石墨烯-铁磁体界面处 Dzyaloshinskii-Moriya 相互作用的起源

我们提出了一种关于流动载体介导的 RKKY 相互作用和虚拟激发介导的 Bloembergen-Rowland (BR) 相互作用的理论,这些相互作用是由铁磁膜的邻近效应引起的石墨烯磁矩之间的。我们表明 RKKY/BR 相互作用由 Heisenberg、Ising 和 Dzyaloshinskii-Moriya (DM) 项组成。在最近距离的情况下,我们估计石墨烯/Co 界面的 RKKY/BR 相互作用的 DM 项约为 0.13 meV,这与 DM 相互作用 $0.16 \pm 0.05$ meV 的实验结果一致。我们的计算表明,层内 RKKY/BR 相互作用可能是石墨烯-铁磁体界面中 DM 相互作用的可能物理起源。这项工作为理解石墨烯/铁磁体系统中的 DM 相互作用提供了新的视角。
更新日期:2020-07-01
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