For structurally symmetric field-effect transistors with respect to the source and the drain, their models should be electrically symmetric about the source–drain interchange. This article shows that the commonly used drain–source voltage clamping technique breaks such a symmetry. This article then presents a symmetric source and drain voltage clamping scheme to solve the problem. The effectiveness of the new scheme is demonstrated by both the planar MOSFET model PSP and the FinFET model BSIM-CMG.

中文翻译：

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场效应晶体管建模中完全源漏对称的对称源漏电压钳位方案

对于关于源极和漏极结构对称的场效应晶体管，它们的模型应该关于源极 - 漏极互换电对称。本文表明，常用的漏源电压钳位技术打破了这种对称性。然后本文提出了一种对称的源漏电压钳位方案来解决该问题。平面 MOSFET 模型 PSP 和 FinFET 模型 BSIM-CMG 都证明了新方案的有效性。