This article deals with the characterization of charge trapping dynamics in a novel 100-nm double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order to study the detrapping mechanisms, we perform the wideband acquisitions of the transient behavior by sweeping the pulsed voltages to cover the entire device operating area. The fast acquisition also enables the characterization of the charge capture behavior, a key aspect for RF performance. From the analysis of the drain current transients, time constants are extracted, showing a fundamental release time constant in the order of 0.1-1 ms, and more than one capture constants, the fastest being in the order of 300 ns. To the best of authors' knowledge, this is the first time that trapping dynamics under large-signal regime are characterized for this type of process.

中文翻译：

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通过宽带瞬态测量对 100 nm AlN/GaN/AlGaN-on-Si HEMT 中的电荷捕获动力学进行实验表征


本文讨论新型 100 nm 双异质结 AlN/GaN/AlGaN-on-Si 射频 (RF) HEMT 工艺中电荷捕获动力学的表征。为了研究去捕获机制，我们通过扫描脉冲电压以覆盖整个器件工作区域来执行瞬态行为的宽带采集。快速采集还可以表征电荷捕获行为，这是射频性能的一个关键方面。通过对漏极电流瞬态的分析，提取了时间常数，显示出基本释放时间常数约为 0.1-1 ms，以及多个捕获常数，最快约为 300 ns。据作者所知，这是第一次针对此类过程描述大信号状态下的俘获动力学特征。