In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the École Polytechnique Fédérale de Lausanne (EPFL) HEMT model, which treats HEMT as a generalized MOSFET. The main emphasis of this article is to estimate SCEs by effectively capturing 2-D channel potential distribution to calculate the reduced barrier height, drain-induced barrier lowering (DIBL), velocity saturation, and channel length modulation (CLM). The model is validated with TCAD simulation results and agreed with measurement data in all regions of operation. This represents the main step toward the design of high-frequency and ultralow-noise HEMT devices using AlGaN/GaN heterostructures.

中文翻译：

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GaN HEMT 中短沟道效应的建模

在本文中，我们提出了一种基于电荷的显式解析模型，用于估计 GaN 高电子迁移率晶体管 (HEMT) 器件中的短沟道效应 (SCE)。所提出的模型源自洛桑联邦理工学院 (EPFL) HEMT 模型的基于物理电荷的核心，该模型将 HEMT 视为广义 MOSFET。本文的主要重点是通过有效捕获 2-D 沟道电位分布来估计 SCE，以计算减小的势垒高度、漏极引起的势垒降低 (DIBL)、速度饱和和沟道长度调制 (CLM)。该模型通过 TCAD 仿真结果进行验证，并与所有操作区域的测量数据一致。这是使用 AlGaN/GaN 异质结构设计高频和超低噪声 HEMT 器件的主要步骤。