Memristor-aided logic (MAGIC) is a technique for performing in-memory computing using memristive devices. The design of a MAGIC NOR gate has been described in detail, and it serves as the basic building block for several processing-in-memory architectures. However, the input stability of the MAGIC NOR gate forces a limitation on the threshold voltages: the magnitude of the set voltage must be higher than the magnitude of the reset voltage. Unfortunately, many of the current leading resistive switching technologies, particularly, valence change memory (VCM), have the opposite ratio between the threshold voltages. In this article, we experimentally demonstrate the undesirable effects of input instability. Furthermore, we introduce three new MAGIC gates for devices with low set-to-reset voltage ratios and experimentally demonstrate their robust operation using Pt/Ta2O5/W/Pt devices. The three gates, combined with constant values, are functionally complete and are demonstrated as building blocks for in-memory logic on VCM devices.

中文翻译：

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使用价变存储器 (VCM) 的忆阻器辅助逻辑 (MAGIC) 的实验演示

忆阻器辅助逻辑 (MAGIC) 是一种使用忆阻器件执行内存计算的技术。已经详细描述了 MAGIC NOR 门的设计，它是几种内存处理架构的基本构建块。然而，MAGIC NOR 门的输入稳定性对阈值电压施加了限制：设置电压的幅度必须高于复位电压的幅度。不幸的是，许多当前领先的电阻开关技术，特别是价变存储器 (VCM)，在阈值电压之间具有相反的比率。在本文中，我们通过实验证明了输入不稳定的不良影响。此外，我们为具有低设置复位电压比的器件引入了三个新的 MAGIC 门，并使用 Pt/Ta2O5/W/Pt 器件通过实验证明了它们的稳健操作。这三个门与常数值相结合，在功能上是完整的，并且被证明是 VCM 设备上内存逻辑的构建块。