The quality and stability of thin-film transistors (TFTs) applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This article introduces a TFT manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate amorphous indium gallium zinc oxide (a-IGZO). A size effect related to this system exists where longer channels allow a greater amount of hydrogen to diffuse into the center of the channel. For shorter channels, this results in a lower energy barrier and a shift in the threshold voltage. A physical mechanism model is proposed to verify the abnormal electrical characteristics caused by hydrogen diffusion into the top-gate a-IGZO. The insights provided by these results can be used to further develop TFTs for use in large-scale display applications.

中文翻译：

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顶栅非晶 InGaZnO 薄膜晶体管中的氢扩散和阈值电压偏移

应用于大型显示​​器的薄膜晶体管 (TFT) 的质量和稳定性对其成功制造和商业适用性至关重要。本文介绍了一种TFT制造工艺，其中源漏系统是通过在顶栅非晶铟镓锌氧化物（a-IGZO）的介电层中掺杂氢来定义的。存在与该系统相关的尺寸效应，其中较长的通道允许更大量的氢扩散到通道的中心。对于较短的通道，这会导致较低的能垒和阈值电压的偏移。提出了一种物理机制模型来验证由氢扩散到顶栅 a-IGZO 引起的异常电特性。