In this article, the atmospheric pressure plasma (APP) treatment method is proposed to solve the instability problem under a long-term electrical bias stress through the semiconductor surface treatment without degrading the excellent electrical characteristics of oxide thin-film transistors (TFTs). The high-energy oxygen radicals produced by the APP without a vacuum system affect the electrical properties by quickly and easily changing the chemical state of the oxygen-related bonds in the semiconductor. Consequently, the amorphous indium gallium zinc oxide TFTs with suitable APP treatment showed excellent bias stress stability and electrical characteristics in comparison with the APP-untreated oxide TFTs. The threshold voltage shift after the negative gate bias stress and positive gate bias stress duration of 1 h significantly reduced from -9.9 to -0.7 V and from +6.7 to +0.5 V, respectively. In addition, the average field-effect mobility remarkably enhanced from 10.8 to 14.8 cm2/Vs and the hysteresis behavior reduced from 0.31 to 0.12 V while maintaining the key parameters of TFTs such as subthreshold swing, ON/OFF ratio, and VON{V}_{ \mathrm{\scriptscriptstyle ON}} .

中文翻译：

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通过大气压等离子体处理进行氧自由基控制，实现高度稳定的 IGZO 薄膜晶体管


本文提出了大气压等离子体（APP）处理方法，通过半导体表面处理解决长期电偏应力下的不稳定问题，且不降低氧化物薄膜晶体管（TFT）优异的电学特性。 APP 在没有真空系统的情况下产生的高能氧自由基通过快速、轻松地改变半导体中与氧相关的键的化学状态来影响电性能。因此，与未经APP处理的氧化物TFT相比，经过适当APP处理的非晶氧化铟镓锌TFT表现出优异的偏置应力稳定性和电特性。负栅极偏压应力和正栅极偏压应力持续 1 小时后，阈值电压漂移分别从 -9.9 V 显着降低至 -0.7 V，从 +6.7 V 显着降低至 +0.5 V。此外，平均场效应迁移率从 10.8 cm2/Vs 显着增强至 14.8 cm2/Vs，磁滞行为从 0.31 V 降低至 0.12 V，同时保持了 TFT 的关键参数，如亚阈值摆幅、开/关比和 VON{V} _{\mathrm{\scriptscriptstyle 开启}} 。