In this article, the steady and transient characteristics of the light-stimulated synaptic transistor based on amorphous indium–gallium–zinc oxide thin film are investigated. An optoelectronic trap charge model with steady and transient methods is employed to simulate the properties of such a neuromorphic device. The device simulation results agree well with the experimental data detected from the fabricated transistors. These numerical simulations can efficiently mimic the synaptic behaviors, such as excitatory postsynaptic current, paired-pulse facilitation, and even high-pass filtering characteristic as well. Furthermore, these results provide a prospective physical understanding of the photosensitive synaptic device for neuromorphic systems and brain-like chips.

中文翻译：

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用于神经形态应用的基于光刺激 α-IGZO 的光电晶体管的研究

在本文中，研究了基于非晶氧化铟镓锌薄膜的光刺激突触晶体管的稳态和瞬态特性。采用具有稳态和瞬态方法的光电陷阱电荷模型来模拟这种神经形态器件的特性。器件模拟结果与从制造的晶体管中检测到的实验数据非常吻合。这些数值模拟可以有效地模拟突触行为，例如兴奋性突触后电流、成对脉冲促进，甚至高通滤波特性。此外，这些结果为神经形态系统和类脑芯片的光敏突触装置提供了前瞻性的物理理解。