Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 $\mu \text {m}$ , whereas a channel length between 10 and 100 $\mu \text {m}$ is used. Due to the lack of uniform performance p-type metal oxide semiconductors, n-type EGTs and passive elements are used to design circuits. For logic gates, transistor–resistor logic has been employed so far, but depletion- and enhancement-mode EGTs in a transistor–transistor logic boost the circuit performance in terms of delay and signal swing. In this article, the threshold voltage of the EGT, which determines the operation mode, is tuned through sizing of the EGTs channel geometry. The feasibility of both transistor operation modes is demonstrated for logic gates and ring oscillators. An inverter operating at a supply voltage of 1 V shows a maximum gain of 9.6 and a propagation delay time of 0.7 ms, which represents an improvement of $\sim \!2\times $ for the gain and oscillation frequency, in comparison with the resistor–transistor logic design. Moreover, the power consumption is reduced by 6 $\times $ .

中文翻译：

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基于增强型和耗尽型电解质门控晶体管的印刷逻辑门

具有氧化铟通道的电解质门控薄膜晶体管 (EGT) 和预期的三个月使用寿命，可在印刷电子 (PE) 领域实现低电压操作 (~1 V)。我们印刷的 EGT 的通道宽度在 200 到 1000 之间变化 $\mu \text {m}$ , 而通道长度介于 10 和 100 $\mu \text {m}$ 用来。由于缺乏性能统一的 p 型金属氧化物半导体，n 型 EGT 和无源元件被用于设计电路。对于逻辑门，迄今为止一直采用晶体管 - 电阻器逻辑，但晶体管 - 晶体管逻辑中的耗尽型和增强型 EGT 提高了电路在延迟和信号摆幅方面的性能。在本文中，决定操作模式的 EGT 阈值电压是通过调整 EGT 通道几何尺寸来调整的。针对逻辑门和环形振荡器证明了两种晶体管操作模式的可行性。在 1 V 电源电压下运行的逆变器显示出 9.6 的最大增益和 0.7 ms 的传播延迟时间，这代表了 $\sim \!2\times $ 与电阻-晶体管逻辑设计相比，增益和振荡频率。而且，功耗降低了6 $\times $ .