To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing ${n}$ -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility (~19.4 cm² V⁻¹s⁻¹), a steep subthreshold slope (~90 mV/dec), near-zero threshold voltage (~0.6 V), and high ON– OFF current ratio ( $\sim 7.9\times 10^{{{9}}}$ ). The passivation layer can effectively improve the stability of flexible ITZO TFTs even under positive bias stress (PBS) and negative bias stress (NBS), and only 0.8/1.3 V threshold voltage shifts are shown after PBS/NBS. In addition, the OTES-passivated transistors exhibit good mechanical reliability and maintain its electrical characteristics during the 10-k bending period, without drastic decline. These results demonstrate that the SAM passivation method is suitable for the fabrication of flexible high-performance metal–oxide electronic devices.

中文翻译：

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自组装单层 (SAM) 作为表面钝化对柔性 a-InSnZnO 薄膜晶体管的影响

为了克服柔性非晶 InSnZnO (a-ITZO) 薄膜晶体管 (TFT) 的环境敏感性，一种利用表面钝化方法 ${n}$ -辛基三乙氧基硅烷（OTES）自组装单层（SAMs）被开发。所开发晶体管的电气特性表明，OTES 钝化可以提高器件性能，表现出高迁移率 (~19.4 cm ² V ^-1 s ^-1 )、陡峭的亚阈值斜率 (~90 mV/dec)、接近零阈值电压 (~0.6 V) 和高 ON-OFF 电流比 ( $\sim 7.9\times 10^{{{9}}}$ ）。即使在正偏置应力（PBS）和负偏置应力（NBS）下，钝化层也能有效提高柔性 ITZO TFT 的稳定性，并且在 PBS/NBS 后仅显示 0.8/1.3 V 的阈值电压偏移。此外，OTES 钝化晶体管表现出良好的机械可靠性，并在 10-k 弯曲期间保持其电气特性，没有急剧下降。这些结果表明 SAM 钝化方法适用于制造柔性高性能金属氧化物电子器件。