Photodetection at a wavelength of about 1060 nm is very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of $\sim 1\times 10^{11}$ Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of −1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent antiinterference capability during the photodetection process. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.

中文翻译：

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在 1060 nm 附近具有峰值响应的高灵敏度窄带硅光电探测器

波长约为 1060 nm 的光电检测对于包括医学成像、光通信以及光检测和测距在内的应用非常重要。在本文中，基于简单的 Si 肖特基结构实现了一种窄带自供电近红外光探测器，在 1060 nm 左右，其中欧姆和肖特基电极配置在 Si 衬底的前后表面，分别。组装后的器件在 1060 nm 附近具有可调谐的峰值响应，半峰全宽为 107 nm，这可能是由于窄光电流产生和硅衬底的自滤波效应的综合效应。在零偏置下，实现了 $\sim 1\times 10^{11}$ Jones 的特定探测率和大约 101 dB 的线性动态范围，尽管在该波长下 Si 的吸收较弱。在-1 V的低偏压下，外量子效率可以提高到135%，表明光电探测过程中存在增益机制。最后，还发现组装好的近红外器件在光电探测过程中表现出优异的抗干扰能力。这些结果证实，目前的硅光电探测器可能会在未来的近红外光电器件和系统中找到有希望的应用。