We report an ambipolar phototransistor using the organic–inorganic hybrid perovskite, CH₃NH₃PbI₃ [methylammonium lead iodide (MAPbI₃)]. The high iconicity of MAPbI₃ leads to intrinsic p-type and n-type self-doping, which enables simultaneous or selective hole and/or electron transport in a single device, depending on the bias conditions. Under white light illumination, both hole and electron current increase by four orders of magnitude and the dark characteristics recover completely and immediately after turning off the light source. In addition, the photosensitivity can be controlled by compositional ratio (MAI:PbI₂) and the thickness of the MAPbI₃ film. Moreover, the hole current shows higher responsivity and shorter response time (0.62 A/W and 100 ms) compared with electron current (0.20 A/W and 200 ms), resulting in respective photodetectivity values of $6.87\times 10^{15}$ and $1.33\times 10^{15}$ Jones. These photodetectivities are among the highest reported, making the phototransistors reported herein suitable for simple and cost-effective optoelectronics.

中文翻译：

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具有高光电探测率的环境空气处理双极钙钛矿光电晶体管

我们报告了一种使用有机-无机杂化钙钛矿 CH ₃ NH ₃ PbI ₃ [甲基铵碘化铅 (MAPbI ₃ )]的双极光电晶体管。MAPbI ₃的高象素性导致本征 p 型和 n 型自掺杂，这取决于偏置条件，这使得在单个器件中同时或选择性的空穴和/或电子传输成为可能。在白光照射下，空穴电流和电子电流均增加四个数量级，暗特性在关闭光源后立即完全恢复。此外，光敏性可以通过组成比（MAI:PbI ₂）和 MAPbI ₃的厚度来控制电影。此外，与电子电流（0.20 A/W 和 200 ms）相比，空穴电流显示出更高的响应度和更短的响应时间（0.62 A/W 和 100 ms），从而导致各自的光电探测值为 $6.87\乘以 10^{15}$ 和 $1.33\乘以 10^{15}$ 琼斯。这些光电探测率是最高的，使本文报道的光电晶体管适用于简单且具有成本效益的光电子学。