4H-SiC Schottky photodetector array was fabricated by pulsed dc sputter deposition of palladium thin film as UV semitransparent Schottky contact on active pixel. Results of electro-optical characterization of these devices as a function of temperature varying from 33 to 393 K are presented. A peak spectral responsivity of 122 mAW⁻¹ at 280 nm is observed. Further, spatial response uniformity for a 4 mm $\times4$ mm detector, scanned by UV spot of $100~\mu \text{m}$ diameter, is within ±5%, whereas the crosstalk between the pixels in $4\times 2$ detector array with a pixel size of $850\,\,\mu \text{m}\,\,\times 850\,\,\mu \text{m}$ is within 1.3%. Capacitance at near zero bias is around 11 pF and 4.79 pF at a reverse bias of 30 V. From the ${I}$ – ${V}$ characteristics, the calculated Schottky barrier height is 1.37 eV for 70 Å thick palladium metal film on 4H-SiC as against the theoretical value of 1.96 eV. Operating temperature studies on detector UV response at 300 nm have shown that the photo-current response at 113 K falls to half of its peak value at ambient. The responsivity of the detectors at 248-nm wavelength is almost constant over a wide temperature range of 33 to 393 K.

中文翻译：

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用于空间应用的 4H-SiC/Pd 肖特基紫外光电探测器阵列的光电性能研究

4H-SiC肖特基光电探测器阵列是通过钯薄膜的脉冲直流溅射沉积制成的，作为有源像素上的UV半透明肖特基接触。介绍了这些器件的光电特性作为温度从 33 到 393 K 变化的函数的结果。观察到在 280 nm 处的峰值光谱响应率为 122 mAW ^-1。此外，4 mm 的空间响应均匀性 $\times4$ 毫米检测器，通过紫外光点扫描 $100~\mu \text{m}$ 直径，在±5%以内，而像素之间的串扰 $4\乘以2$ 像素大小为的探测器阵列 $850\,\,\mu \text{m}\,\,\times 850\,\,\mu \text{m}$ 在 1.3% 以内。接近零偏置时的电容约为 11 pF，反向偏置为 30 V 时为 4.79 pF。 ${I}$ —— ${V}$ 根据特性，对于 4H-SiC 上的 70 埃厚钯金属膜，计算出的肖特基势垒高度为 1.37 eV，而理论值为 1.96 eV。对 300 nm 下检测器 UV 响应的工作温度研究表明，113 K 下的光电流响应下降到其环境峰值的一半。检测器在 248 nm 波长处的响应度在 33 到 393 K 的宽温度范围内几乎是恒定的。