We present an interesting transient effect found in silicon-on-insulator (SOI) transistors, where the drain current responds slowly to a back-gate voltage ( ${V}_{\text {BG}}$ ) pulse. This transient mechanism is due to the deep-depletion region in the SOI substrate induced by the ${V}_{\text {BG}}$ pulse and has been validated by experimental and TCAD simulation results. The deep-depletion characteristic can be employed for photodetection in a fully depleted (FD)-SOI MOSFET device. We have measured the photoresponse of the FD-SOI MOSFET under various light illumination conditions and studied systematically the impact of the ${V}_{\text {BG}}$ pulse duty ratio, amplitude, and period on the responsivity and detection range. An optimized device structure, fabricated in an advanced ultrathin body and buried oxide (BOX) (UTBB) SOI technology, shows low operation voltage and extended detection range.

中文翻译：

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SOI衬底中的深耗尽效应及其在具有可调响应率和探测范围的光电探测器中的应用

我们提出了一种在绝缘体上硅 (SOI) 晶体管中发现的有趣瞬态效应，其中漏极电流对背栅电压的响应缓慢（ ${V}_{\text {BG}}$ ) 脉冲。这种瞬态机制是由于 SOI 衬底中的深耗尽区引起的 ${V}_{\text {BG}}$ 脉冲，并已通过实验和 TCAD 模拟结果进行验证。深耗尽特性可用于全耗尽 (FD)-SOI MOSFET 器件中的光电检测。我们测量了 FD-SOI MOSFET 在各种光照条件下的光响应，并系统地研究了 ${V}_{\text {BG}}$ 响应度和检测范围的脉冲占空比、幅度和周期。采用先进的超薄体和掩埋氧化物 (BOX) (UTBB) SOI 技术制造的优化器件结构显示出低工作电压和扩展的检测范围。