A new gate structure in the trench-gate insulated-gate bipolar transistor (IGBT) design is proposed and analyzed for power-loss reduction and the suppression of electromagnetic-interference (EMI) noise. Although the turn-off loss and the ON-state voltage drop ${V}_{\text {ce(sat)}}$ are improved by the injection-enhancement (IE) effect, the IE effect caused dynamic avalanche that limits the turn-off loss reduction. In addition, EMI noise is induced by high dI/dt and large surge current due to the negative gate capacitance. This article shows that the dynamic avalanche and the negative gate capacitance can be suppressed by the management of the electric field concentration and hole current flow around the trench gate by the proposed alternated trench-gate (AT) IGBT structure, and both low power loss and good switching controllability can be obtained. The device simulation results show that the AT-IGBT improves the turn-on surge current ${I}_{\text {surge}} - {V}_{\text {ce(sat)}}$ tradeoff compared with the conventional IGBTs.

中文翻译：

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用于低损耗和抑制负栅极电容的交替沟道栅极 IGBT

提出并分析了沟槽栅极绝缘栅双极晶体管 (IGBT) 设计中的新栅极结构，以降低功率损耗和抑制电磁干扰 (EMI) 噪声。虽然关断损耗和导通电压下降 ${V}_{\text {ce(sat)}}$ 注入增强 (IE) 效应改善了这种情况，IE 效应会导致动态雪崩，从而限制了关断损耗的降低。此外，EMI 噪声是由高DI/dt由于负栅极电容而产生大浪涌电流。本文表明，动态雪崩和负栅极电容可以通过所提出的交替沟槽栅极 (AT) IGBT 结构管理沟槽栅极周围的电场集中和空穴电流来抑制，并且具有低功耗和低功耗。可以获得良好的切换可控性。器件仿真结果表明AT-IGBT改善了开通浪涌电流 ${I}_{\text {surge}} - {V}_{\text {ce(sat)}}$ 与传统 IGBT 相比。