This article investigates the stability of hydrogenated amorphous silicon (a-Si:H) p-i-n junctions employed as temperature sensors in lab-on-chip (LoC) applications. The devices have been tested under forward current injection and different temperatures (from room temperature up to 90 °C) in order to reproduce the practical operating conditions. Two sets of devices with different diborane concentrations in the p-doped layer have been investigated as a case study. For both sets, a temperature-drift error of 0.05 °C/h and a sensitivity around 3 mV/°C in the range between 30 °C and 90 °C have been achieved. These results demonstrate the device suitability as a thin-film temperature sensor integrated into LoC systems that implement thermal treatment of the biological samples as, for example, DNA amplification.

中文翻译：

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关于非晶硅温度传感器的稳定性

本文研究了在芯片实验室 ​​(LoC) 应用中用作温度传感器的氢化非晶硅 (a-Si:H) pin 结的稳定性。这些器件已经在正向电流注入和不同温度（从室温到 90 °C）下进行了测试，以重现实际工作条件。作为案例研究，研究了两组在 p 掺杂层中具有不同乙硼烷浓度的器件。对于这两组，在 30°C 和 90°C 之间的范围内实现了 0.05 °C/h 的温度漂移误差和大约 3 mV/°C 的灵敏度。这些结果证明了该设备作为集成到 LoC 系统中的薄膜温度传感器的适用性，该系统对生物样品进行热处理，例如 DNA 扩增。