Most of the sensors are based on different device architectures depending on the application type. A novel dopingless (DL) vertical Nanowire (VNW)-TFET is proposed that is used for the implementation of the gas sensor, biosensor, photo-detector and temperature sensor. Charge-plasma technique is used to provide the necessary doping for the proper functioning of the device; where metals with specific work functions are deposited on the source/drain region to accumulate charge carriers within the region. The device is designed with a spacer length of 5 nm that provided the enhanced device parameters. Smaller source/drain length helped in maintaining abrupt junction at the source/drain-channel interface even with a large spacer length. Heteromaterials such as Silicon-Germanium, Indium Antimonide, Indium Arsenide and Germanium-Tin are used as source materials for DL-VNW-TFET to compensate the low ON-current of the TFET devices. Exposed source/gate catalytic electrode, open source-cavity, photo-dielectric material/transparent conductive oxide (high work function) and heteromaterials are the key sensing elements of the implemented sensors. ON-current, OFF-current and threshold voltage are considered as the sensing parameters. Obtained results of the sensing parameters confirm the possible use of the proposed device for adaptive multi-sensing applications.

中文翻译：

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基于新型异质材料的无掺杂纳米线 TFET 在低工作电压下的传感应用前景


大多数传感器基于不同的设备架构，具体取决于应用类型。提出了一种新型无掺杂（DL）垂直纳米线（VNW）-TFET，用于实现气体传感器、生物传感器、光电探测器和温度传感器。电荷等离子体技术用于提供器件正常运行所需的掺杂；其中具有特定功函数的金属沉积在源极/漏极区域上以在该区域内积累电荷载流子。该器件设计的间隔物长度为 5 nm，可提供增强的器件参数。即使间隔物长度较大，较小的源极/漏极长度也有助于在源极/漏极沟道界面处维持突变结。硅锗、锑化铟、砷化铟和锗锡等异质材料被用作 DL-VNW-TFET 的源材料，以补偿 TFET 器件的低导通电流。暴露的源极/栅极催化电极、开放源腔、光电介电材料/透明导电氧化物（高功函数）和异质材料是所实现传感器的关键传感元件。 ON电流、OFF电流和阈值电压被视为感测参数。获得的传感参数结果证实了所提出的设备可用于自适应多传感应用。