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Correction to “Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air”
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2020-07-23 , DOI: 10.1109/jeds.2020.3002710 Saleh Kargarrazi , Ananth Saran Yalamarthy , Peter F. Satterthwaite , Scott William Blankenberg , Caitlin Chapin , Debbie G. Senesky
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2020-07-23 , DOI: 10.1109/jeds.2020.3002710 Saleh Kargarrazi , Ananth Saran Yalamarthy , Peter F. Satterthwaite , Scott William Blankenberg , Caitlin Chapin , Debbie G. Senesky
In the referenced paper [1]
, the micro-photograph shown in Fig. 1 (b) is of a representative HEMT. The measured HEMT of the paper has the following dimensions: (
${\mathrm {LG}} =5\mu {\mathrm{ m}}, {\mathrm {W}} = 20\mu {\mathrm{ m}}, {\mathrm {LGS}} = {\mathrm {LGD}} = 6\mu {\mathrm{ m}}$
). Fig. 1 has to be replaced with the corrected figure shown below:
中文翻译:
对“在空气中400°C下AlGaN / GaN HEMT能够稳定运行25小时”的更正
在参考文件中[1]
,显微照片如图 图1(b) 是具有代表性的HEMT。测得的纸张HEMT具有以下尺寸:(
$ {\ mathrm {LG}} = 5 \ mu {\ mathrm {m}},{\ mathrm {W}} = 20 \ mu {\ mathrm {m}},{\ mathrm {LGS}} = {\ mathrm {LGD}} = 6 \ mu {\ mathrm {m}} $
)。 图。1 必须用以下所示的更正数字代替:
更新日期:2020-07-24
中文翻译:
对“在空气中400°C下AlGaN / GaN HEMT能够稳定运行25小时”的更正
在参考文件中