The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2 ×1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

中文翻译：

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从 H 封端的硅表面受控去除氢原子

在 H 封端的硅表面上受控形成悬空键结构是制造硅量子电子器件的原子精确方法的第一步。超高真空扫描隧道显微镜 (STM) 尖端用于通过在保持正偏压的样品的情况下注入电子来选择性地从 Si(100)-2 ×1:H 表面解吸氢原子。作者提出了一种光刻方法，允许 STM 在负偏压成像条件下运行，并同时根据需要解吸 H 原子。将高频信号添加到负偏压以提供去除氢所需的能量。在此频率下产生的电流及其谐波被过滤，以最大限度地减少它们对 STM 反馈控制回路操作的影响。作者表明，采用这种方法可以减少光刻过程中尖端样品碰撞的可能性。他们还证明，这种方法为从 H 封端的硅表面受控和精确地去除 H 原子提供了巨大的潜力，因此可用于制造实用的硅基原子级器件。