Fermi level pinning at Schottky barriers strongly limits the minimization of contact resistances in devices and thereby limits the scaling of modern Si electronic devices, so it is useful to understand the full range of behaviors of Schottky barriers. The authors find that some semiconductor interfaces with compound metals like silicides have apparently weaker Fermi level pinning. This occurs as these metals have an underlying covalent skeleton, whose interfaces with semiconductors lead to miscoordinated defect sites that create additional localized interface states that go beyond the standard metal-induced gap states (MIGSs) model of Schottky barriers. This causes a stronger dependence of Schottky barrier height on the metal and on interface orientation. These states are argued to be an additional component needed to extend the MIGS model.

中文翻译：

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扩展肖特基势垒的金属诱导间隙状态模型

肖特基势垒处的费米能级钉扎强烈限制了器件中接触电阻的最小化，从而限制了现代硅电子器件的缩放，因此了解肖特基势垒的全范围行为是有用的。作者发现，一些半导体与复合金属（如硅化物）的界面具有明显较弱的费米能级钉扎。这是因为这些金属具有潜在的共价骨架，其与半导体的界面导致错配的缺陷位点，从而产生超出肖特基势垒的标准金属诱导间隙态 (MIGS) 模型的额外局部界面态。这导致肖特基势垒高度对金属和界面取向的依赖性更强。这些状态被认为是扩展 MIGS 模型所需的附加组件。