This report presents the results of fabricating GaN nanorods by inductively coupled plasma etching using BCl 3/Cl 2 chemistry. Interestingly, the GaN nanorods are formed only in the area initially masked by the sacrificial metal mask. In addition to the metallic mask, a specific feature of this process is the application of an insulating ceramic carrier for the improvement of the process performance. The authors show that using the same etching parameters but with a conductive silicon carrier significantly reduces the efficiency of nanorod formation. Auger electron spectroscopy was applied to propose and confirm the mechanism of nanorod formation ceramic carrier and properly selected metallic masks. The usefulness of the developed method of nanorod production has been confirmed by its application in the fabrication and characterization of GaN-based UV light-emitting diodes.

中文翻译：

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用于形成用于紫外发光二极管技术的氮化镓纳米棒的电感耦合等离子体蚀刻工艺的实施

本报告介绍了使用 BCl 3/Cl 2 化学通过电感耦合等离子体蚀刻制造 GaN 纳米棒的结果。有趣的是，GaN 纳米棒仅在最初被牺牲金属掩模掩蔽的区域中形成。除了金属掩模之外，该工艺的一个特点是应用绝缘陶瓷载体来提高工艺性能。作者表明，使用相同的蚀刻参数但使用导电硅载体会显着降低纳米棒的形成效率。Auger electron spectroscopy was applied to propose and confirm the mechanism of nanorod formation ceramic carrier and properly selected metallic masks.