Among one-dimensional transition-metal trichalcogenides, TaSe₃ is unconventional in many respects. One is its strong topological semimetallicity as predicted by first-principles calculations. We report the experimental investigations of the electronic properties of one-dimensional-like TaSe₃ single crystals. While the b-axis electrical resistivity shows good metallicity with a high residual resistivity ratio greater than 100, an extremely large magnetoresistance is observed reaching ≈7 × 10³% at 1.9 K for 14 T. Interestingly, the magnetoresistance follows the Kohler’s rule with nearly quadratic magnetic field dependence, consistent with the electron–hole compensation scenario as confirmed by our Hall conductivity data. Both the longitudinal and Hall conductivities show Shubnikov-de Haas oscillations with two frequencies: F_α ≈ 97 T and F_β ≈ 186 T. Quantitative analysis indicates that F_α results from the two-dimensional-like electron band with the non-trivial Berry phase [1.1π], and F_β from the hole band with the trivial Berry phase [0(3D) − 0.16π(2D)]. Our experimental findings are consistent with the predictions based on first-principles calculations.

在一维过渡金属三卤化物中，TaSe ₃在许多方面都是非常规的。一是根据第一性原理计算所预测的强拓扑半金属性。我们报告了一维TaSe ₃单晶的电子性质的实验研究。尽管b轴电阻率显示出良好的金属性，且剩余电阻率比大于100，但观察到的极高磁阻达到≈7×10 ^3。1.9 K，14 T时的百分数。有趣的是，磁阻遵循科勒定律，具有几乎二次磁场依赖性，这与霍尔电导率数据证实的电子-空穴补偿情况一致。纵向和霍尔电导率显示舒勃尼科夫德哈斯振荡使用两个频率：˚F _α 听，说：97 T和˚F _β 听，说：186 T.定量分析表明，˚F _α从结果二维状与非平凡贝里电子带相[1.1 π ]和˚F _β从与琐碎贝里相位[0（3D）的空穴能带- 0.16 π（2D）]。我们的实验结果与基于第一性原理计算的预测一致。