Non-classical crystallization suggests that crystals can grow with nanoparticles as a building block. In this case, the crystallization behavior depends on the size and charge of the nanoparticles. If charged nanoparticles (CNPs) are small enough, they become liquid-like and tend to undergo epitaxial recrystallization. Here, the size effect of SiC CNPs on film crystallinity was studied in the hot-wire chemical vapor deposition process. To do this, SiC nanoparticles were captured under different processing conditions—in this case, wire temperature, precursor concentration and the filament bias. Increasing the temperature of tungsten wires and decreasing the ratio of (SiH₄ + CH₄)/H₂ reduced the size of the SiC nanoparticles. When the nanoparticles were small enough, an epitaxial SiC film approximately 100-nm-thick was grown, whereas larger nanoparticles produced polycrystalline SiC films. These results suggest that the size of the CNPs is an important process variable when growing films by means of non-classical crystallization.

中文翻译：

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带电纳米粒子尺寸对热丝化学气相沉积SiC薄膜结晶度的影响

非经典结晶表明，晶体可以与纳米粒子一起生长。在这种情况下，结晶行为取决于纳米颗粒的大小和电荷。如果带电的纳米粒子（CNP）足够小，它们将变成液体状并倾向于进行外延重结晶。在这里，在热线化学气相沉积过程中研究了SiC CNP对薄膜结晶度的尺寸效应。为此，在不同的加工条件下捕获了SiC纳米颗粒-在这种情况下，是线温度，前驱体浓度和灯丝偏压。升高钨丝的温度并降低（SiH ₄ + CH ₄）/ H ₂的比率减小了SiC纳米颗粒的尺寸。当纳米颗粒足够小时，生长出约100nm厚的外延SiC膜，而较大的纳米颗粒产生多晶SiC膜。这些结果表明，当通过非经典结晶生长薄膜时，CNP的尺寸是重要的工艺变量。