The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm²/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state ¹H, ⁷¹Ga, and ¹¹⁵In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The ⁷¹Ga{¹H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.

通过将聚乙烯醇（PVA）添加到前体溶液中，水溶液处理的铟镓氧化物（IGO）薄膜晶体管（TFT）的场效应电子迁移率显着提高，增加了70倍，达到7.9 cm ² / VS. 为了了解这种现象的起源，通过一系列实验和理论技术研究了IGO：PVA薄膜的微观结构，电子结构和电荷传输，包括In K-edge和Ga K-edge扩展X射线吸收精细结构（EXAFS）；共振软X射线散射（R-SoXS）; 紫外光电子能谱（UPS）; 傅立叶变换红外（FT-IR）光谱；飞行时间二次离子质谱（ToF-SIMS）与成分/工艺有关的TFT特性；高分辨率固态¹H，⁷¹ Ga和¹¹⁵ In NMR光谱；以及从头算分子动力学（MD）液体猝灭模拟的离散傅里叶变换（DFT）分析。在⁷¹嘎{ ^1个H}旋转回波双共振（REDOR）NMR和其他数据表明，PVA达到最佳ħ掺杂与~3.4埃的嘎...ħ距离和转换从六到四个坐标镓，它们一起抑制了深陷阱缺陷的定位。这减少了金属氧化物多面体畸变，从而增加了电子迁移率。因此，羟基聚合物掺杂为绿色溶剂加工的金属氧化物膜中的有效H掺杂提供了途径，并有望以简单的二元组成提供高性能，超稳定的金属氧化物半导体电子产品。