Abstract An experimental study was conducted to analyze the behavior of semiconductor materials in a variable strong electrical field medium, the effect of semiconductor barriers on the formation and development of the discharge, the barrier effect of semiconductor materials and the frequency response of Semiconductor Barrier Discharge (SBD) system. Applications were carried out in vacuum, air and nitrogen medium separately with randomly selected frequency values. It was seen from the first stage results that the barrier effect of the semiconductor layers on the current oscillations is quite striking in the vacuum medium. As the frequency of the applied voltage increases, the barrier effect of the semiconductor layers was seen to reduce. Besides, as the frequency values increase, the discharge current was determined to get more linear. In the second stage, the results have shown that the SBD operated with the AC voltage characterizes the structure of a band-stop filter. The frequency of the voltage applied to the SBD system and the design of the reactor determine the frequency at which the discharge current was suppressed. Knowing these new features of SBD effects on semiconductors, give an important contribution to the design of the semiconductor production industry.

中文翻译：

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SBD系统中p型和n型半导体势垒的实验频率分析

摘要 通过实验研究了半导体材料在可变强电场介质中的行为、半导体势垒对放电形成和发展的影响、半导体材料的势垒效应以及半导体势垒放电的频率响应。 SBD) 系统。应用分别在真空、空气和氮气介质中以随机选择的频率值进行。从第一阶段的结果可以看出，半导体层对电流振荡的势垒效应在真空介质中非常显着。随着施加电压的频率增加，可以看到半导体层的阻挡效应降低。此外，随着频率值的增加，放电电流被确定为变得更加线性。在第二阶段，结果表明，在交流电压下运行的 SBD 表征了带阻滤波器的结构。施加到 SBD 系统的电压频率和电抗器的设计决定了抑制放电电流的频率。了解 SBD 对半导体影响的这些新特性，对半导体生产行业的设计做出了重要贡献。