Si Nanowires (NWs) are typically synthesized on limited substrates that lack essential characteristics, such as mechanical flexibility and optical transparency. Most of the synthesis processes are also costly and inhibit widespread applications enabled by NWs. Throughout this study, therefore, we have shown that ordered and disordered single crystalline silicon nanowires can be grown and transferred from Si wafer to a broad range of foreign substrates while maintaining their original order on the mother substrates. Vertically-aligned Si NWs have been successfully transferred to Ag-pre-coated glasses, transparent-conductive-oxides and metal foils that ensure ohmic contacts between Si NWs and the transferred substrates, which are critical for scalable manufacturing of electronics and opto-electronic devices. This strategy presents an opportunity to develop low-cost device manufacturing with highly crystalline semiconductor materials, and is a critical leap towards the next generation high performance core-shell Si-NWs solar cells. In order to demonstrate devices based on the transferred NWs, the NWs are coated with a thin layer of CZTS to fabricate a third generation solar cell. The devices were characterized and exhibited the highest power conversion efficiency of 1.31% reported to date, for such transferred NWs and material combinations.

Si纳米线（NWs）通常是在缺乏基本特征（例如机械柔韧性和光学透明度）的有限基材上合成的。大多数合成过程也很昂贵，并且阻碍了NW的广泛应用。因此，在整个研究过程中，我们表明，有序无序的单晶硅纳米线可以生长并从Si晶圆转移到各种异质衬底上，同时在母衬底上保持其原始顺序。垂直排列的Si NW已成功转移到Ag预涂玻璃，透明导电氧化物和金属箔上，以确保Si NW与转移的基板之间的欧姆接触，这对于可扩展的电子产品和光电设备的制造至关重要。该策略为利用高结晶半导体材料开发低成本器件制造提供了机会，并且是向下一代高性能核壳Si-NWs太阳能电池迈出的重要一步。为了演示基于转移的NW的设备，在NW上涂覆一层薄薄的CZTS，以制造第三代太阳能电池。对于这种转移的NW和材料组合，这些器件的特征在于，并展现出迄今为止报道的最高功率转换效率1.31％。NW涂有一层薄薄的CZTS，以制造第三代太阳能电池。对于这种转移的NW和材料组合，这些器件的特征在于，并展现出迄今为止报道的最高功率转换效率1.31％。NW涂有一层薄薄的CZTS，以制造第三代太阳能电池。对于这种转移的NW和材料组合，这些器件的特征在于，并展现出迄今为止报道的最高功率转换效率1.31％。