Abstract This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si technology for characterization of SiC MOS devices. The inability of these conventional characterization techniques to correctly evaluate the trap capture cross section and field-effect mobility in SiC MOS devices are investigated and explained. As near-interface traps (NITs) are an important cause of field-effect mobility degradation in SiC MOS devices, which is different from the impact of interface traps in Si devices, these characterization techniques are unable to produce meaningful results. Therefore, special care is required when measuring these NITs in SiC MOS devices. Due to the quantum confinement effect, the NITs located above the conduction band edge are able to capture and release channel electrons from the conduction band via tunnelling. Recent characterization techniques, specifically designed for SiC MOS devices, measure the NITs above the bottom of conduction band and consider the quantum confinement effect to find the energy position of the NITs. These recent characterization techniques are presented in the later part of the paper.

中文翻译：

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碳化硅 MOS 电容器的电气特性：严格审查

摘要 本文回顾了从硅技术中采用的最先进的电气技术用于表征 SiC MOS 器件的可行性。研究并解释了这些传统表征技术无法正确评估 SiC MOS 器件中的陷阱捕获截面和场效应迁移率的问题。由于近界面陷阱 (NIT) 是 SiC MOS 器件场效应迁移率下降的重要原因，这与 Si 器件中界面陷阱的影响不同，因此这些表征技术无法产生有意义的结果。因此，在测量 SiC MOS 器件中的这些 NIT 时需要特别小心。由于量子限制效应，位于导带边缘上方的 NIT 能够通过隧道效应从导带捕获和释放通道电子。最近专为 SiC MOS 器件设计的表征技术测量导带底部上方的 NIT，并考虑量子限制效应以找到 NIT 的能量位置。这些最近的表征技术将在本文的后面部分介绍。