Abstract 4H-SiC trenches with depths of approximately 25 μm were filled under a special condition called the quasi-selective epitaxial growth mode that showed a refill-rate of 2.1 μm/h within 12 h, using a hot-wall chemical vapor deposition (CVD) method with the assistance of HCl gas. To develop a high-rate growth mode for the 4H-SiC trench filling process, several CVD growth parameters, such as the flow rates of source gases, HCl and H2 carrier gases, their pressures, and the applied C/Si ratio, were regulated and optimized, to enhance the partial pressures of the source species in the gas phase of the CVD reactor. A refill-rate of 11.4 μm/h in 2 h was achieved, which is nearly five times faster than the initial growth.

中文翻译：

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通过提高化学气相沉积工艺中源物种的分压，以 10 μm/h 的速度快速填充 4H-SiC 沟槽

摘要 在称为准选择性外延生长模式的特殊条件下填充深度约为 25 μm 的 4H-SiC 沟槽，该模式在 12 小时内显示出 2.1 μm/h 的再填充速率，使用热壁化学气相沉积 (CVD) ) 方法在 HCl 气体的帮助下。为了开发 4H-SiC 沟槽填充工艺的高速生长模式，调节了几个 CVD 生长参数，例如源气体、HCl 和 H2 载气的流速、它们的压力以及应用的 C/Si 比并优化，以提高 CVD 反应器气相中源物种的分压。在 2 小时内实现了 11.4 μm/h 的再填充率，这比初始增长快了近五倍。