This paper presents an original technique for temperature-programmed growth of N-doped substrate-sized graphene single crystals on Ni(111). The process includes acetonitrile adsorption at about −10°C, flash heating of the sample to 140°C, and annealing at 400°C to form a continuous graphene-structure epitaxial carbon monolayer. The intercalation of gold under the carbon layer on Ni(111) helps create a quasi-free-standing N-doped graphene single crystal. Scanning tunneling microscopy together with density functional theory calculations have been used to determine the structure of nitrogen centers in the graphene. One finding is that nitrogen can be present in the graphene lattice as individual atoms or two- and three-atom clusters. The nitrogen content in graphene can be from 0.2 to 0.6%.

中文翻译：

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乙腈分子在拟定站立N掺杂石墨烯单晶上的程序升温生长。

本文提出了一种在Ni（111）上进行N掺杂衬底尺寸的石墨烯单晶的程序升温生长的原始技术。该方法包括在约-10°C下吸附乙腈，将样品快速加热至140°C并在400°C退火以形成连续的石墨烯结构外延碳单层。金在Ni（111）上的碳层下的嵌入有助于形成准自立的N掺杂石墨烯单晶。扫描隧道显微镜和密度泛函理论计算已被用于确定石墨烯中氮中心的结构。一个发现是氮可以作为单个原子或两个和三个原子团簇存在于石墨烯晶格中。石墨烯中的氮含量可以为0.2至0.6％。