In₂O₃ is multifunctional material with rich physical phenomena. In this paper, effects of Fe and Cu doping on the physical properties of In_1.95-xCr_0.05M_xO₃ (M = Fe, Cu) thin films prepared by sol-gel method followed by spin-coating technique were investigated. The films were characterised using X-ray diffraction (XRD), transmission electron microscopy (TEM), UV–vis spectrophotometer, Hall effect, X-ray photoelectron spectroscopy (XPS), and vibrating sample magnetometer. Doping with Cu reduced the lattice parameter and optical transmittance of In_1.95-xCr_0.05M_xO₃ films more than that with Fe. In addition, Cu doping induced p-type conductivity in In_1.95-xCr_0.05M_xO₃ films. Optical band gap was increased from 3.76 eV for In_1.95Cr_0.05O₃ to ~ 3.8 eV for both Cu- and Fe-doped films, which was attributed to quantum confinement behaviour. Average grain size measured using TEM was reduced from 8.2 nm for In_1.95Cr_0.05O₃ to 6.6 and 5.6 nm for Fe and Cu doped films, respectively. Saturation magnetisation of films was reduced with Fe doping more than that with Cu doping. Magnetic behaviours of films were explained within the framework of bound magnetic polaron model.

In ₂ O ₃是具有丰富物理现象的多功能材料。本文研究了Fe和Cu掺杂对溶胶-凝胶法和旋涂法制备的In _{1.95- x} Cr _0.05 M _x O ₃（M = Fe，Cu）薄膜物理性能的影响。使用X射线衍射（XRD），透射电子显微镜（TEM），紫外可见分光光度计，霍尔效应，X射线光电子能谱（XPS）和振动样品磁力计对膜进行表征。掺杂Cu会降低In _{1.95- x} Cr _0.05 M _x O ₃的晶格参数和透光率比铁更能拍电影。此外，Cu掺杂在In _1.95-x Cr _0.05 M _x O ₃薄膜中引起p型导电性。铜和铁掺杂薄膜的光学带隙从In _1.95 Cr _0.05 O _3的3.76 eV增加到〜3.8 eV ，这归因于量子限制行为。对于_1.95 Cr _0.05 O _3，使用TEM测量的平均晶粒尺寸从8.2 nm减小Fe和Cu掺杂的薄膜分别达到6.6和5.6 nm。Fe掺杂的薄膜的饱和磁化强度比Cu掺杂的降低更多。在约束磁极化子模型的框架内解释了膜的磁行为。