Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 μW at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.

中文翻译：

---

基于GaAs的pHEMT和太赫兹成像的强和窄带太赫兹辐射

强和窄带太赫兹（THz）辐射是从基于GaAs的伪形高电子迁移率晶体管（pHEMT）获得的。关于偏置条件和工作温度的辐射特性被广泛地表征。在室温和77 K下测得的最大发射功率分别为63和278μW。通过使用pHEMT产生的THz辐射，可以成功成像隐藏在布料中的金属物体。