High‐efficiency single‐junction p‐i‐n GaAs solar cell on roll‐to‐roll epi‐ready flexible metal foils for low‐cost photovoltaics,Progress in Photovoltaics

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High‐efficiency single‐junction p‐i‐n GaAs solar cell on roll‐to‐roll epi‐ready flexible metal foils for low‐cost photovoltaics
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-07-23 , DOI: 10.1002/pip.3308
Devendra Khatiwada _{1,

2,

3} , Carlos A. Favela _{1,

2,

3} , Sicong Sun _{1,

2,

3} , Chuanze Zhang _{1,

2,

3} , Sahil Sharma _{1,

2,

3} , Monika Rathi _{1,

2,

3} , Pavel Dutta _{1,

2,

3} , Eduard Galstyan _{1,

2,

3} , Alex Belianinov ₄ , Anton V. Ievlev ₄ , Sara Pouladi _{1,

2,

3} , Anastasiia Fedorenko ₅ , Jae‐Hyun Ryou _{1,

2,

3} , Seth Hubbard ₅ , Venkat Selvamanickam _{1,

2,

3}

Affiliation

We demonstrate the fabrication and characterization of high‐efficiency, single‐junction p‐i‐n GaAs solar cells, on flexible metal foil with epi‐ready buffer via roll‐to‐roll fabrication. Single‐junction p‐i‐n GaAs solar cells were fabricated using metal–organic chemical vapor deposition (MOCVD). An efficiency greater than 13% was obtained at 1 sun, which is the highest reported efficiency on GaAs photovoltaics directly deposited on metal tapes. This exceeds our previously reported study showcasing 11.5% efficiency on single‐junction p‐n solar cell structure. Improved morphology of p‐i‐n structure compared with p‐n is explained by atomic force microscopy (AFM), scanning electron microscopy (SEM), and helium ion microscopy (HIM) measurements. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) analysis showed reduced Zn diffusion in p‐i‐n cell compared with the p‐n cell. We attribute the improvement in efficiency of p‐i‐n cells on flexible metal tapes to the quality of the junction, surface morphology, controlled diffusion of species within the active layers, and increase in absorption due to the optimized intrinsic layer thickness.

中文翻译：

用于低成本光伏的卷对卷外延柔性金属箔上的高效单结p-i-n GaAs太阳能电池

我们通过卷对卷制造技术演示了在具有易备缓冲层的柔性金属箔上制造高效单结p-i-n GaAs太阳能电池的特性。单结p-i-n GaAs太阳能电池是使用金属有机化学气相沉积（MOCVD）制成的。在1个太阳下获得的效率大于13％，这是直接沉积在金属带上的GaAs光伏上报道的最高效率。这超出了我们先前报道的研究，该研究显示单结PN太阳电池结构的效率为11.5％。通过原子力显微镜（AFM），扫描电子显微镜（SEM）和氦离子显微镜（HIM）测量，可以解释p-i-n结构与p-n相比形态有所改善。飞行时间二次离子质谱（TOF-SIMS）分析显示，与p-n电池相比，p-i-n电池中的Zn扩散减少。我们将柔性金属带上的p-i-n电池效率的提高归因于结的质量，表面形态，活性层内物质的受控扩散以及由于优化的本征层厚度而导致的吸收增加。

更新日期：2020-07-23

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