Abstract Self-induced GaN nanorod (NR) growth on flexible niobium (Nb) metal foil has been reported using laser assisted molecular beam epitaxy (LMBE) technique. The role of growth temperature (600, 650 and 700 °C), laser repetition rate (10–30 Hz) and Nb foil pre-nitridation condition on the formation and properties of GaN NRs have been studied systematically. The dense (∼2.42 × 109 cm−2) GaN NRs were grown on pre-nitridated Nb metal foil at growth temperature of 700 °C with length and diameter of ∼550–640 nm and ∼60–130 nm, respectively. The low growth temperature of 650 °C or the high laser repetition rate of 30 Hz increases the radial growth rate of GaN NRs on Nb foil which results the coalescence of NRs. The size and density of GaN NRs on Nb metal foil could be controlled with tuning of LMBE growth parameters. The GaN NRs obtained on bare and nitridated Nb foil have excellent optical properties with an intense near band emission peak position at ∼3.40 eV and a narrow linewidth of 90–100 meV. The controlled growth of GaN NRs with excellent optical quality on Nb foil offers the possibility of realization of futuristic high efficient flexible III-nitride nanostructure-based optoelectronic devices.

中文翻译：

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使用激光分子束外延在柔性铌金属箔上自诱导生长 GaN 纳米棒组件

摘要 已经报道了使用激光辅助分子束外延 (LMBE) 技术在柔性铌 (Nb) 金属箔上自诱导 GaN 纳米棒 (NR) 生长。已经系统地研究了生长温度（600、650 和 700 °C）、激光重复频率（10-30 Hz）和 Nb 箔预氮化条件对 GaN NRs 的形成和性能的影响。在 700 °C 的生长温度下，在预氮化的 Nb 金属箔上生长致密（~2.42 × 109 cm-2）GaN NR，长度和直径分别为~550-640 nm 和~60-130 nm。650 °C 的低生长温度或 30 Hz 的高激光重复频率增加了 Nb 箔上 GaN NRs 的径向生长速率，从而导致 NRs 的聚结。Nb 金属箔上 GaN NRs 的尺寸和密度可以通过调整 LMBE 生长参数来控制。在裸露和氮化的 Nb 箔上获得的 GaN NRs 具有优异的光学性能，在 ~3.40 eV 处具有强烈的近带发射峰位置和 90-100 meV 的窄线宽。在 Nb 箔上可控生长具有优异光学质量的 GaN NR 为实现基于未来高效柔性 III 族氮化物纳米结构的光电器件提供了可能性。