Abstract Compound semiconductors alloyed with Bi have many interesting properties, but the low solubility of Bi in these materials leads to effects such as Bi segregation and the formation of surface droplets. To study these effects, a series of GaAsBi films were grown as a function of growth conditions, namely the Bi:As and As:Ga flux ratios. Four surface morphologies emerged—surfaces that were free of droplets, contained Bi droplets, Ga droplets, or biphasic Ga/Bi droplets—as a function of flux ratio. Further analysis with X- ray diffraction, Transmission Electron Microscopy, and Atomic Probe Tomography revealed specific microstructures corresponding to the types of droplets present. Finally, we propose a model to explain each microstructure that takes into consideration factors including Ga adatom diffusion, bulk Bi diffusion, Bi droplet mobility, and film growth rate.

中文翻译：

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III:V 比对 GaAs1-xBix (001) 的成分和微观结构性能的影响

摘要 与 Bi 合金化的化合物半导体具有许多有趣的特性，但 Bi 在这些材料中的低溶解度会导致 Bi 偏析和表面液滴形成等影响。为了研究这些影响，生长了一系列 GaAsBi 薄膜作为生长条件的函数，即 Bi:As 和 As:Ga 通量比。作为通量比的函数，出现了四种表面形态——不含液滴、含有 Bi 液滴、Ga 液滴或双相 Ga/Bi 液滴的表面。X 射线衍射、透射电子显微镜和原子探针断层扫描的进一步分析揭示了与存在的液滴类型相对应的特定微结构。最后，我们提出了一个模型来解释每个微观结构，该模型考虑了包括 Ga 吸附原子扩散、体 Bi 扩散、