In this paper, Ga 2 O 3 films were grown on m-sapphire substances at different temperatures of 600 °C, 700 °C and 800 °C by low pressure MOCVD. By changing the temperature, the crystal phase change of the Ga 2 O 3 thin films grown on the m-sapphire substrates were studied. The effects of temperature on structural characteristics, surface morphology and optical properties of the films were studied systematically. XRD results indicated that the mixture of α -phase and β -phase Ga 2 O 3 films were obtained on the m-sapphire substrates. As the temperature increased to 800 °C, the growth of α -Ga 2 O 3 was weakened. The degree of polycrystallization of β -Ga 2 O 3 decreased, and it gradually changed to preferential growth along the (−402) direction. With increasing of the temperature, the surface morphology of films was obviously changed. AFM measurement showed that ...

中文翻译：

---

温度对低压MOCVD在m面蓝宝石衬底上生长的Ga 2 O 3薄膜的结构和光学性能的影响

在本文中，通过低压MOCVD在600°C，700°C和800°C的不同温度下，在m-蓝宝石物质上生长了Ga 2 O 3膜。通过改变温度，研究了在m-蓝宝石衬底上生长的Ga 2 O 3薄膜的晶体相变。系统地研究了温度对薄膜结构特性，表面形貌和光学性能的影响。XRD结果表明，在m-蓝宝石衬底上获得了α相和β相Ga 2 O 3膜的混合物。随着温度升高至800℃，α-Ga 2 O 3的生长减弱。β-Ga 2 O 3的多晶度降低，并且沿（-402）方向逐渐变为优先生长。随着温度的升高，薄膜的表面形态发生明显变化。