A comprehensive study of the band alignments of Ti x Al 1−x O y (with x = 9%, 16%, 25%, 36%, 100%) and Ga x Al 1−x O y (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry. The permittivity, k, has been found to be enhanced from ∼10 for 9% Ti in Ti x Al 1−x O y to 76 for TiO 2 , however TiO 2 brings an unfavorable band alignment and a small conduction band offset (<0.1 eV) with GaN. The latter has been observed for all studied Ti x Al 1−x O y films deposited on GaN. On the other hand, Ga x Al 1−x O y films show a substantial increase of the band gap from 4.5 eV for Ga 2 O 3 to 5.5 eV for x = 20% Ga and 6.0 eV for x = 5% Ga. A strong suppression of leakage current in associated ...

中文翻译：

---

GaN上沉积TiAlO和GaAlO的原子层的能带排列研究

对Ti x Al 1-x O y（x = 9％，16％，25％，36％，100％）和Ga x Al 1-x O y（x = 5％，已经提出了使用X射线光电子能谱和可变角能谱椭偏仪在GaN上使用原子层沉积技术制造的20％，80％和95％）。已经发现介电常数k从Ti x Al 1-x O y中的9％Ti的〜10提高到TiO 2的76，但是TiO 2带来了不利的能带取向和小的导带偏移（<0.1 eV）和GaN。对于所有研究的沉积在GaN上的Ti x Al 1-x O y膜，都可以观察到后者。另一方面，Ga x Al 1-x O y膜的带隙从Ga 2 O 3的4.5 eV增长到x = 20％Ga的5.5 eV和x = 5％Ga的6.0 eV显着增加。强烈抑制相关设备中的漏电流