The gate‐induced electrical instability of SnO thin‐film transistors (TFTs) with SiO₂ and Al₂O₃/SiO₂ gate dielectric layers is evaluated. The hysteresis voltage (V_hy) and threshold voltage (V_th) in the transfer characteristics of SnO TFTs depend on the sweep range and rate of gate voltage (V_GS). The TFT with an Al₂O₃/SiO₂ gate dielectric layer exhibit reduced V_hy and stable V_th compared with the device without an Al₂O₃ layer. The introduction of an Al₂O₃ layer between the SnO channel and the SiO₂ layer suppresses the electron and hole trapping at the channel/dielectric interface and contains mobile oxygen vacancies that counteract the hole trapping effect.

中文翻译：

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具有SiO2和Al2O3 / SiO2栅极电介质的p型SnO薄膜晶体管的栅诱导电不稳定性的比较研究

评估了具有SiO ₂和Al ₂ O ₃ / SiO ₂栅极介电层的SnO薄膜晶体管（TFT）的栅极诱导的电不稳定性。SnO TFT的传输特性中的磁滞电压（V _hy）和阈值电压（V _th）取决于扫描范围和栅极电压（V _GS）的比率。具有Al的TFT ₂ ö ₃ /二氧化硅₂栅极介电层表现出降低的V _HY和稳定V_个与没有的Al的装置相比₂ ö ₃层。在SnO沟道和SiO ₂层之间引入Al ₂ O ₃层抑制了电子和空穴在沟道/电介质界面处的俘获，并且含有抵消空穴俘获作用的可移动的氧空位。