The optical properties of InAs quantum dashes (QDashes) grown on InP and InAs quantum dots (QDots) grown on GaAs in a dashes- or dots-in-a-well (DWELL) configuration are comparatively investigated using temperature-dependent photoluminescence (PL) measurements. The trends in PL characteristics such as exciton energy, spectral bandwidth and integrated intensity with respect to temperature are found to be distinctly dissimilar between the two systems. A rate-equation model involving exciton recombination and thermal transfer in a localized-state ensemble is used to quantitively interpret the experimental data. These results suggest that QDashes in this configuration exhibit PL properties more consistent with a lower degree of carrier localization compared to QDots. A preliminary structural analysis highlighting the shape/size differences between the two nanostructures is also presented.

使用随温度变化的光致发光（PL）比较研究了在InP上生长的InAs量子破折号（QDash）和在GaAs中生长的GaAs中生长的InAs量子点（QDots）的光学特性。测量。发现PL特性（例如激子能量，光谱带宽和相对于温度的积分强度）的趋势在两个系统之间明显不同。在局部状态集合中涉及激子复合和热传递的速率方程模型用于定量解释实验数据。这些结果表明，与QDots相比，此配置中的QDash显示PL特性与较低的载流子定位更加一致。