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Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-07-21 , DOI: 10.1039/d0na00405g
Matias Kalaswad 1 , Bruce Zhang 1 , Xuejing Wang 2 , Han Wang 2 , Xingyao Gao 2 , Haiyan Wang 1, 2
Affiliation  

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories. In this work, an oxide–metal vertically aligned nanocomposite (VAN) platform has been used to successfully demonstrate self-assembled multiferroic BaTiO3–Fe (BTO–Fe) nanocomposite films with high structural anisotropy on Si substrates. The effects of various buffer layers on the crystallinity, microstructure, and physical properties of the BTO–Fe films have been explored. With an appropriate buffer layer design, e.g. SrTiO3/TiN bilayer buffer, the epitaxial quality of the BTO matrix and the anisotropy of the Fe nanopillars can be improved greatly, which in turn enhances the physical properties, including the ferromagnetic, ferroelectric, and optical response of the BTO–Fe thin films. This unique combination of properties integrated on Si offers a promising approach in the design of multifunctional nanocomposites for Si-based memories and optical devices.

中文翻译:


将高度各向异性多铁 BaTiO3-Fe 纳米复合薄膜集成到 Si 上以实现器件应用



在硅衬底上集成高度各向异性的多铁性薄膜是实现低成本器件,特别是高速和低功耗存储器的关键一步。在这项工作中,氧化物-金属垂直排列纳米复合材料(VAN)平台已被用来成功演示在Si基底上具有高结构各向异性的自组装多铁性BaTiO 3 -Fe(BTO-Fe)纳米复合材料薄膜。研究了不同缓冲层对 BTO-Fe 薄膜结晶度、微观结构和物理性能的影响。通过适当的缓冲层设计,例如SrTiO 3 /TiN双层缓冲,可以大大提高BTO基体的外延质量和Fe纳米柱的各向异性,从而增强物理性能,包括铁磁、铁电和光学性能。 BTO-Fe 薄膜的响应。这种集成在硅上的独特性能组合为硅基存储器和光学器件的多功能纳米复合材料的设计提供了一种有前途的方法。
更新日期:2020-09-16
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