This article provides in-depth insight into the commutation processes of high-speed SiC mosfets and investigates how they are influenced by various parasitic inductances. The switching dynamics of wide-bandgap power semiconductor devices are significantly larger compared to those of silicon devices. Therefore, the parasitic elements in the switching cell become increasingly important, as they limit the current and voltage slopes and cause oscillations. A thorough understanding of these effects is necessary for the design of highly efficient and integrated next-generation power electronic converters. However, the means of modeling hard-switched transitions, e.g., equivalent circuits, have not been adapted sufficiently compared to existing models on relatively slow-switching devices. This article presents the theory of commutation in high-speed semiconductor devices and outlines its key differences to traditional commutation models. These new insights are used to analyze the influence of parasitic inductances on the switching transitions. The theory is validated experimentally by double-pulse tests with variable parasitic inductances, performed on a test printed circuit board equipped with SiC mosfets. The results are in good agreement with the theoretical findings.

中文翻译：

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深入了解包含寄生元件的 SiC MOSFET 开关单元中的换向过程

本文深入探讨了高速 SiC mosfet 的换向过程，并研究了它们如何受到各种寄生电感的影响。与硅器件相比，宽带隙功率半导体器件的开关动态要大得多。因此，开关单元中的寄生元件变得越来越重要，因为它们会限制电流和电压斜率并引起振荡。对这些影响的透彻理解对于设计高效和集成的下一代电力电子转换器是必要的。然而，与相对慢速开关设备上的现有模型相比，对硬开关转换（例如等效电路）进行建模的方法还没有得到充分适应。本文介绍了高速半导体器件中的换向理论，并概述了其与传统换向模型的主要区别。这些新见解用于分析寄生电感对开关转换的影响。该理论通过具有可变寄生电感的双脉冲测试在实验上得到验证，该测试在配备有 SiC mosfet 的测试印刷电路板上进行。结果与理论发现非常吻合。