Abstract This study proposes a novel photodetector (PD) that uses an amorphous InGaZnO (IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an ultraviolet (UV) light absorption layer and the nanowires provide carrier conduction paths and light trapping centers. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under UV illumination. A high responsivity of 0.53 A/W at 380 nm and a quick response time of less than 0.2 ms are achieved. The device exhibits self-powering characteristics under UV illumination due to the amorphous phase of IGZO. The architecture, which combines a wide-bandgap a-IGZO (~3.5 eV) with a narrow-bandgap SiNWs, means that the photo-detection spectra extend from UV to near-infrared. This study demonstrates that the a-IGZO/SiNWs PD is suitable for applications that require high response speeds, broadband detection and self-sufficient functionality.

中文翻译：

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使用非晶 InGaZnO/p 硅纳米线异质结的自供电紫外光电二极管

摘要 本研究提出了一种使用非晶 InGaZnO (IGZO)/硅纳米线 (SiNWs) 异质结的新型光电探测器 (PD)，其中 IGZO 用作紫外 (UV) 光吸收层，纳米线提供载流子传导路径和光捕获中心。pn 异质结在紫外光照射下在黑暗中表现出优异的整流特性和独特的光伏行为。实现了 380 nm 处 0.53 A/W 的高响应度和小于 0.2 ms 的快速响应时间。由于 IGZO 的非晶相，该器件在紫外线照射下表现出自供电特性。该架构结合了宽带隙 a-IGZO (~3.5 eV) 和窄带隙 SiNW，意味着光检测光谱从紫外扩展到近红外。