Abstract In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

中文翻译：

---

退火对基于 IGZO 的 CBRAM 器件电阻开关的影响

摘要 在这项研究中，报告了氧化物沉积后退火对基于 IGZO 的导电桥接随机存取存储器 (CBRAM) 性能的影响。发现除了SET/RESET电压的阻变参数明显降低外，N2退火后它们的离散度和高阻态与低阻态的电阻比都可以得到改善。通过 X 射线光电子能谱研究了退火对电阻开关性能增强的影响。可以认为，开关层中氧空位的增加更好地控制了灯丝的形成，这是电阻开关特性提高的主要原因。