We have theoretically investigated the drag resistivity in electron-electron bilayer system by using the random phase approximation (RPA) for weakly interacting regime, at low temperature, high density, and large interlayer separation limit. We show analytical expressions by using long wavelength (low frequency regime) expansion of response function in Boltzmann regime and bare Coulomb interaction for non homogeneous dielectric environment which make the system interested and different compare to others. The influence of electron-electron bare inter and intra layer interaction are considered static cause of static local form factor (LFF) approximation in coupled layer system of non homogeneous dielectric background. The effective dielectric function and LFF are obtained from the solution of the Poisson equation of a three-layer dielectric medium. The effects of local form factors are included in bare inter and intralayer potential, yields the dependency of layer separation and dielectric constants of the materials. Drag resistivity dependency is measured numerically with respect to temperature T and density n and compared to other 2DES, which yields to possess the same qualitative and quantitative behaviour compare to bilayer system of homogeneous dielectric environment.

我们已经通过在低温，高密度和大的层间分离极限下使用弱相态的随机相逼近（RPA）理论研究了电子-电子双层系统中的抗阻性。我们通过在Boltzmann体制中使用响应函数的长波长（低频体制）扩展和非均质介电环境中的裸库仑相互作用展示了解析表达式，这使该系统引起了人们的兴趣，与其他系统相比有所不同。电子-电子裸层间和层间相互作用的影响被认为是非均匀介电背景耦合层系统中静态局部形状因子（LFF）近似的静态原因。有效介电函数和LFF由三层介电介质的泊松方程的解获得。裸露的层间和层间电势包括局部形状因子的影响，产生了层间距和材料介电常数的依赖性。相对于温度T和密度n，测量了电阻抗性的相关性，并与其他2DES进行了比较，与均匀介电环境的双层系统相比，其具有相同的定性和定量行为。