In this paper, an innovative integrated Si photonic modulator based on electrically refractive index-tunable indium-tin-oxide (ITO) material is presented. The key component of the device consists of a thin Au layer embedded in a Si waveguide and a thin layer of ITO deposited on the Au layer through an adhesive HfO₂ layer. Light coupled into the transverse-magnetic mode of the Si waveguide generates two surface plasmon modes propagating simultaneously at the Au-HfO₂ interface and at the Au-Si interface. These waves recombine and interfere at the end of the Au layer. The modulation mechanism is activated by electrically tuning the free carrier concentration of the ITO layer, which changes the ITO refractive index, causing a difference in the group index between the two interfering modes. This complementary-metal-oxide-semiconductor-compatible integration of electro-optical modulation into a commercially available silicon-on-insulator platform provides great potential toward compact and efficient photonic integrated circuits for next-generation data communication.

在本文中，提出了一种基于电折射率可调的铟锡氧化物（ITO）材料的创新型集成式Si光子调制器。该设备的关键组件由嵌入在Si波导中的Au薄层和通过粘合剂HfO ₂层沉积在Au层上的ITO薄层组成。耦合到Si波导的横向磁模式的光产生两个表面等离振子模式，同时在Au-HfO ₂处传播界面和Au-Si界面。这些波在Au层的末端重组并干涉。通过电调节ITO层的自由载流子浓度来激活调制机制，这会改变ITO折射率，从而导致两种干扰模式之间的基团折射率不同。将电光调制的这种与金属氧化物半导体兼容的兼容集成到可购买的绝缘体上硅平台上，为下一代数据通信的紧凑高效的光子集成电路提供了巨大的潜力。