Abstract Current work has undertaken the synthesis of barium sulphide, ferrous sulphide and barium sulphide doped ferrous sulphide complex using dithiocarbamate (DTC) ligand as single source precursor for the first time in an in-situ mode. Doped metal sulphides were grown into thin films of 840 nm thickness via physical vapor deposition (PVD) on pre-sonicated fluorine doped tin oxide (FTO) inside resistive heating unit (RHU). Prepared metal sulphides and thin films were evaluated for their crystallographic, compositional, optical, microstructural and elemental analysis via X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet visible spectrophotometry (UV-Vis), field emission scanning electron microscopy (FE-SEM), and Rutherford back scattering spectrometry (RBS), respectively. An average crystallite size of 37 nm was exhibited by XRD. FT-IR peaks recorded in the range of 4000–400 cm−1 via potassium bromide palletization technique were indicative of the successful chelation of metal sulphides by DTC. UV-Vis based optical parameters expressed a direct and indirect bandgap of 3.5 and 3 eV, respectively. Exceedingly compact and uniform thin films were exhibited by FE-SEM with development of agglomerated clusters. Strong signals for barium, iron and sulphur were confirmed via RBS having 5 MV pelletron tandom accelerator with an alpha beam of 2.08 MeV made normally incident on the target sample and scattered at an angle of 170°. Electrochemical investigation i.e. cyclic voltammetry (CV), linear sweep voltammetry (LSV) and chronoamperometry (CA) of the fabricated thin films expressed impressive electrical characteristics with a specific capacitance of 34.06 Fg−1 at 10 mV/s and a functional stability for 1900 s at 100 mA. Fabricated films possess a suitable candidacy for utilization in photovoltaic and electrochemical contraptions.

中文翻译：

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物理气相沉积硫化钡掺杂硫化铁二硫代氨基甲酸盐薄膜的合成、表征和电化学研究

摘要 目前的工作是首次使用二硫代氨基甲酸酯 (DTC) 配体作为单一来源的前体以原位模式合成硫化钡、硫化亚铁和硫化钡掺杂的硫化亚铁络合物。掺杂的金属硫化物通过物理气相沉积 (PVD) 在电阻加热单元 (RHU) 内预先超声处理的掺氟氧化锡 (FTO) 上生长成 840 nm 的薄膜。通过 X 射线粉末衍射 (XRD)、傅里叶变换红外光谱 (FT-IR)、紫外可见分光光度法 (UV-Vis)、场强对制备的金属硫化物和薄膜的晶体学、成分、光学、微观结构和元素分析进行​​评估。分别是发射扫描电子显微镜 (FE-SEM) 和卢瑟福背散射光谱 (RBS)。XRD显示平均晶粒尺寸为37nm。通过溴化钾码垛技术在 4000-400 cm-1 范围内记录的 FT-IR 峰表明 DTC 成功螯合了金属硫化物。基于 UV-Vis 的光学参数分别表示 3.5 和 3 eV 的直接和间接带隙。FE-SEM 显示出非常紧凑和均匀的薄膜，并形成团聚簇。钡、铁和硫的强信号通过 RBS 得到确认，该 RBS 具有 5 MV 球团串联加​​速器，2.08 MeV 的 α 光束垂直入射到目标样品上并以 170° 的角度散射。电化学研究，即循环伏安法 (CV)，制造的薄膜的线性扫描伏安法 (LSV) 和计时电流法 (CA) 表现出令人印象深刻的电气特性，在 10 mV/s 下的比电容为 34.06 Fg-1，在 100 mA 下具有 1900 s 的功能稳定性。制造的薄膜具有合适的候选资格，可用于光伏和电化学装置。