A multi-directional Spring-Assisted triboelectric nanogenerator (SA-TENG) with a power of 0.42 mW is successfully fabricated based on a simple industrial technique. Here, a Q-switched pulsed laser (QSL) is applied to etch the Aluminum film surface. It enables to create a micro-nanostructured surface with a groove system perpendicular to the distance between the grooves of $20\mathrm{\mu }\mathrm{m}$. For Polytetrafluoroethylene (PTFE) thin films, however, the surface is modified by the Inductively Coupled Plasma Reactive Ion Etching technology (ICP-RIE). The role of QSL Etched Aluminum in enhancing the triboelectric performance of the Al/PTFE device is demonstrated. Indeed, the open-circuit voltage and the short-circuit current both increase from 80 V to 130 V and from 3.9 $\mathrm{\mu }$A to 6.6 $\mathrm{\mu }$A, respectively, when the Al surface is treated. In the vertically vibrating operation mode, the SA-TENG produces a voltage, current and power of 66 V, 5.1 $\mathrm{\mu }$A and 350 $\mathrm{\mu }$W, respectively, at the average velocity of 10 cm/s. In addition, the horizontally rotation mode with a rotation angle of 30° and an angular velocity of 30 deg/s generates an open-circuit voltage of 57 V, a short-circuit current of 4.4 $\mathrm{\mu }$A and a power of 64 $\mathrm{\mu }$W at 107 $\mathrm{\Omega }$. The real-time practical applicability of SA-TENG was confirmed by the lighting up of 92 LEDs connected in series and by the charging up of a 10 $\mathrm{\mu }$F capacitor to 2.5 V in 35 s.

基于简单的工业技术成功地制造了功率为0.42 mW的多向弹簧辅助摩擦电纳米发电机（SA-TENG）。在此，使用Q开关脉冲激光（QSL）蚀刻铝膜表面。它可以创建一个微纳米结构表面，该系统的凹槽系统垂直于凹槽之间的距离$20\mathrm{\mu }\mathrm{米}$。但是，对于聚四氟乙烯（PTFE）薄膜，其表面通过感应耦合等离子体反应离子刻蚀技术（ICP-RIE）进行了改性。证明了QSL蚀刻铝在增强Al / PTFE装置的摩擦电性能方面的作用。实际上，开路电压和短路电流都从80 V增加到130 V，从3.9增加到$\mathrm{\mu }$A至6.6 $\mathrm{\mu }$当处理Al表面时分别为A。在垂直振动操作模式下，SA-TENG产生的电压，电流和功率为66 V，5.1$\mathrm{\mu }$A和350 $\mathrm{\mu }$W分别以10 cm / s的平均速度移动。此外，旋转角度为30°，角速度为30度/秒的水平旋转模式会产生57 V的开路电压，4.4的短路电流$\mathrm{\mu }$A和64的幂 $\mathrm{\mu }$W在107 $\mathrm{\Omega }$。SA-TENG的实时实际适用性通过串联连接的92个LED的点亮和10个LED的充电来确认$\mathrm{\mu }$F电容在35 s内达到2.5 V.