Modern electronic and photonic devices rely on single-crystalline thin film semiconductors for high performance and reproducibility. The emerging halide perovskites have extraordinary electronic and photonic properties and can be synthesized via low cost solution-based methods. They have been used in a variety of devices with performance approaching or over the devices based on conventional materials. However, their solution based growth method is intrinsically challenge to grow large scale single-crystalline thin film due to the random nucleation and isotropous growth of the crystal. Here, we report the growth of centimeter-scale perovskite single-crystalline thin films by controlling the nucleation density and growth rate of the crystal under a spatially confined growth condition. The hydrophobic treatment on substrates inhibits nucleation and accelerates the growth of single-crystalline thin film, providing enough space for initial nucleus growing up quickly without touching each other. Single-crystalline perovskite thin-film with an aspect ratio of 1000 (1 cm in side length, 10 μm in thickness) has been successfully grown. The low trap density and the high mobility of the as-grown thin film show a high crystallinity. The photodetector based on the perovskite thin film has achieved a gain ~ 104, benefitting from the short transit time of the carries due to the high mobility and thin thickness of the active layer. Our work opens up a new route to grow large scale perovskite single-crystalline thin films, providing a platform to develop high- performance devices.

中文翻译：

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通过表面工程生长厘米级钙钛矿单晶薄膜。

现代电子和光子器件依靠单晶薄膜半导体来实现高性能和可重复性。新兴的卤化物钙钛矿具有非凡的电子和光子特性，可以通过低成本的基于溶液的方法合成。它们已被用于各种器件，其性能接近或超过基于传统材料的器件。然而，由于晶体的随机成核和各向同性生长，他们基于溶液的生长方法本质上是生长大规模单晶薄膜的挑战。在这里，我们报告了在空间受限的生长条件下通过控制晶体的成核密度和生长速率来生长厘米级钙钛矿单晶薄膜。衬底上的疏水处理抑制成核并加速单晶薄膜的生长，为初始晶核快速生长提供足够的空间而不会相互接触。成功生长长宽比为1000（边长1cm，厚度10μm）的单晶钙钛矿薄膜。生长薄膜的低陷阱密度和高迁移率表现出高结晶度。基于钙钛矿薄膜的光电探测器已经实现了〜104的增益，受益于由于有源层的高迁移率和薄厚度而导致的载流子渡越时间短。我们的工作开辟了一条生长大规模钙钛矿单晶薄膜的新途径，为开发高性能器件提供了平台。