Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal–oxide–semiconductor (CMOS) technology^1,2,3,4. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature^4,5,6,7, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae⁸ are used to selectively generate valley-polarized carriers in MoS₂ through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration^9,10,11 even without charge current, and can propagate over 18 μm by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.

基于山谷自由度而不是电荷的Valleytronics，是互补金属-氧化物-半导体（CMOS）技术^1,2,3,4以外的下一代信息设备的有希望的候选者。尽管基于激子注入或在低温^4,5,6,7时横向电流方案的非局部响应已经探究了许多有趣的Valleytronic特性，但仍然存在类似于电子设备中的晶体管（特别是在室温下）的Valleytronic构建块的演示。难以捉摸。在这里，我们报告了一种固态设备，该设备可以在室温下生成，传播，检测和操纵谷值信息的全过程。手性纳米新月等离子体天线⁸在线性极化的红外激发下，通过热电子注入，硅酸被用于选择性地在MoS _2中产生谷极化的载流子。这些寿命长的谷极化自由载流子可以在谷霍尔结构^9,10,11中检测到即使没有充电电流，也可以通过漂移传播超过18μm。此外，静电门控使我们能够调节霍尔电流谷值。电谷霍尔输出可以驱动级联级的谷操纵，从而使该器件能够用作具有纯谷电子输入/输出的无电荷电流的晶体管。我们的结果证明了通过谷底自由度编码和处理信息的可能性，并提供了一种研究量子材料中贝里曲率偶极子的通用策略。